At the VLSI Symposium (Japan, 16-18 June), Intel has shown some interesting information about its 14nm FinFET process. In particular, Intel has spoken about the Mobile version of its 14nm FinFET process.

The most interesting news is about the density of the SRAM Cells, available in 3 variants:

• High-Density (HDC) 0.0499 μm²
• Low-Voltage (LVC) 0.0588 μm²
• High-Performance (HPC) 0.0706 μm²

As to this day, Intel has compared its Low-Voltage SRAM with the High-Peformance TSMC SRAM (0.07 μm²), but now we know that it's like to compare oranges with apples. If we consider the  High-Performance version of Intel SRAM, we can see that the density is almost equal. That means that the density of these two nodes is not so different if the products are similar.

Source: Pc.Watch.co.jp

Pubblicato in: News, English News
Tags: 14nm , 16nm , finfet , intel , sram , tsmc

Autore: Gian Maria Forni
Esperto in: Esperto di mercati e CPU

Sebbene sia laureato in Lettere e Filosofia, indirizzo Storia Contemporanea, e scriva per quotidiani e riviste di tale settore, ha sempre avuto la passione per l'informatica ed ha collaborato quale moderatore in importanti forum del settore

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